Low temperature transport in p-doped InAs nanowires

Journal Article · Mon Oct 14 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4825275· OSTI ID:22217905

Upadhyay, S.; Jespersen, T. S.; Madsen, M. H.; Krogstrup, P.; Nygård, J. ^[1]

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1. Center for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

• OSTI ID: 22217905
• Journal Information: Applied Physics Letters, Vol. 103, Issue 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
BERYLLIUM
DOPED MATERIALS
ELECTRON MOBILITY
ELECTRONS
FABRICATION
HOLE MOBILITY
HOLES
INDIUM ARSENIDES
INTERFERENCE
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
STACKING FAULTS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K