The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy
- Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)
- Department of Physics, Duke University, Durham, North Carolina 27708 (United States)
A study of the relationship between strain and the incorporation of group III elements in ternary InGaN and InAlN grown by molecular beam epitaxy is reported. Using X-ray Photoelectron Spectroscopy compositional depth profiles with x-ray diffraction, we are able to find a clear relationship between strain and In incorporation including tensile-strained InAlN which has, to date, not been studied. The results show that fully strained films contain homogeneous indium composition while partially relaxed films have a non-homogeneous indium composition with depth. These results can be interpreted by considering the impurity formation energies of indium in host lattices.
- OSTI ID:
- 22217904
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics
Depth-resolved magnetic and structural analysis of relaxing epitaxial
Journal Article
·
Wed Oct 21 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:22217904
+6 more
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics
Journal Article
·
Sun Dec 21 00:00:00 EST 2014
· Journal of Applied Physics
·
OSTI ID:22217904
+6 more
Depth-resolved magnetic and structural analysis of relaxing epitaxial
Journal Article
·
Sun Mar 01 00:00:00 EST 2015
· Physical Review. B, Condensed Matter and Materials Physics
·
OSTI ID:22217904
+5 more