Heteroepitaxial growth and surface structure of L1{sub 0}-MnGa(111) ultra-thin films on GaN(0001)

Journal Article · Mon Oct 14 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4826203· OSTI ID:22217901

Mandru, Andrada-Oana; Wang, Kangkang; Cooper, Kevin; Ingram, David C.; Smith, Arthur R. ^[1]; Garcia Diaz, Reyes; Takeuchi, Noboru ^[1]; Haider, Muhammad ^[1]

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1. Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

L1{sub 0}-structured MnGa(111) ultra-thin films were heteroepitaxially grown on GaN(0001) under lightly Mn-rich conditions using molecular beam epitaxy. Room-temperature scanning tunneling microscopy (STM) investigations reveal smooth terraces and angular step edges, with the surface structure consisting primarily of a 2 × 2 reconstruction along with small patches of 1 × 2. Theoretical calculations were carried out using density functional theory, and the simulated STM images were calculated using the Tersoff-Hamman approximation, revealing that a stoichiometric 1 × 2 and a Mn-rich 2 × 2 surface structure give the best agreement with the observed experimental images.

• OSTI ID: 22217901
• Journal Information: Applied Physics Letters, Vol. 103, Issue 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
APPROXIMATIONS
DENSITY FUNCTIONAL METHOD
GALLIUM ALLOYS
GALLIUM NITRIDES
IMAGES
MANGANESE ALLOYS
MOLECULAR BEAM EPITAXY
SCANNING TUNNELING MICROSCOPY
SIMULATION
STOICHIOMETRY
SURFACES
THIN FILMS