Metal-insulator transition in SrTi{sub 1−x}V{sub x}O{sub 3} thin films

Journal Article · Mon Nov 25 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4836576· OSTI ID:22217835

Gu, Man ^[1]; Wolf, Stuart A. ^[1]; Lu, Jiwei ^[2]

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1. Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States)
2. Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

Epitaxial SrTi{sub 1−x}V{sub x}O{sub 3} (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

• OSTI ID: 22217835
• Journal Information: Applied Physics Letters, Vol. 103, Issue 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINATES
CONCENTRATION RATIO
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
ELECTRON CORRELATION
EPITAXY
FERMI GAS
LANTHANUM COMPOUNDS
PULSES
STRONTIUM COMPOUNDS
SUBSTRATES
THIN FILMS
TITANIUM COMPOUNDS
VANADIUM