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Title: Polymer/metal hybrid multilayers modified Schottky devices

Abstract

Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene) (P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spin-coating (PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques to prepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor of the Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in the thickness range of 1–5 bilayers. It was observed that the barrier height of such hybrid layered systems can be tuned as a function of bilayers number and its evolution was quantified and analyzed.

Authors:
; ; ;  [1]; ;  [2];  [3]
  1. Laboratory for Molecular Surfaces and Nanotechnology (LAMSUN), Department of Chemical Sciences, University of Catania and CSGI, Viale A. Doria 6, 95125 Catania (Italy)
  2. Dipartimento di Fisica ed Astronomia-Università di Catania, via S. Sofia 64, 95123 Catania (Italy)
  3. MATIS IMM-CNR, via S. Sofia 64, 95123 Catania (Italy)
Publication Date:
OSTI Identifier:
22217801
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; ELECTRIC POTENTIAL; EQUIPMENT; GOLD; ITERATIVE METHODS; LAYERS; MONOCRYSTALS; NANOSTRUCTURES; PMMA; SPIN-ON COATING; SPUTTERING; THICKNESS

Citation Formats

Torrisi, V., Isgrò, G., Li Destri, G., Marletta, G., Ruffino, F., Grimaldi, M. G., MATIS IMM-CNR, via S. Sofia 64, 95123 Catania, and Crupi, I. Polymer/metal hybrid multilayers modified Schottky devices. United States: N. p., 2013. Web. doi:10.1063/1.4829532.
Torrisi, V., Isgrò, G., Li Destri, G., Marletta, G., Ruffino, F., Grimaldi, M. G., MATIS IMM-CNR, via S. Sofia 64, 95123 Catania, & Crupi, I. Polymer/metal hybrid multilayers modified Schottky devices. United States. https://doi.org/10.1063/1.4829532
Torrisi, V., Isgrò, G., Li Destri, G., Marletta, G., Ruffino, F., Grimaldi, M. G., MATIS IMM-CNR, via S. Sofia 64, 95123 Catania, and Crupi, I. 2013. "Polymer/metal hybrid multilayers modified Schottky devices". United States. https://doi.org/10.1063/1.4829532.
@article{osti_22217801,
title = {Polymer/metal hybrid multilayers modified Schottky devices},
author = {Torrisi, V. and Isgrò, G. and Li Destri, G. and Marletta, G. and Ruffino, F. and Grimaldi, M. G. and MATIS IMM-CNR, via S. Sofia 64, 95123 Catania and Crupi, I.},
abstractNote = {Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene) (P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spin-coating (PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques to prepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor of the Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in the thickness range of 1–5 bilayers. It was observed that the barrier height of such hybrid layered systems can be tuned as a function of bilayers number and its evolution was quantified and analyzed.},
doi = {10.1063/1.4829532},
url = {https://www.osti.gov/biblio/22217801}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 103,
place = {United States},
year = {Mon Nov 04 00:00:00 EST 2013},
month = {Mon Nov 04 00:00:00 EST 2013}
}