Self-assembly of compositionally modulated Ga{sub 1−x}Mn{sub x}As multilayers during molecular beam epitaxy

Journal Article · Mon Nov 04 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4829922· OSTI ID:22217799

Gallardo-Hernández, S.; Martinez-Velis, I.; Ramirez-Lopez, M.; Lopez-Lopez, M. ^[1]; Kudriatsev, Y.; Escobosa-Echavarria, A. ^[2]; Luiz Morelhao, S. ^[3]

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1. Physics Department, Centro de Investigación y de Estudios Avanzados del IPN, Apartado 14470, D.F. Mexico (Mexico)
2. Electrical Engineer Department-SEES, Centro de Investigación y de Estudios Avanzados del IPN, Apartado 14470, D.F. Mexico (Mexico)
3. Instituto de Física, USP, CP 66318, 05315-970 Sao Paulo, SP (Brazil)

GaMnAs structures were grown on GaAs(100) substrates by molecular beam epitaxy employing different growth parameters. We studied manganese incorporation employing secondary ion mass spectrometry (SIMS). At a growth temperature of 300 °C, we observed a self-assembled modulation of the manganese concentration. SIMS depth profiles were analyzed employing a depth resolution function taking into account sputtering-induced broadening of the original distribution and segregation. We found a Mn segregation length along the growth direction of ∼4 nm. The presence of GaMnAs multilayers was corroborated by high-resolution x-ray diffraction. Spinodal decomposition is a possible mechanism for the spontaneous formation of the multilayer structure.

• OSTI ID: 22217799
• Journal Information: Applied Physics Letters, Vol. 103, Issue 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
DECOMPOSITION
DEPTH
GALLIUM ARSENIDES
ION MICROPROBE ANALYSIS
LAYERS
MANGANESE
MASS SPECTRA
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
RESOLUTION
SEGREGATION
SEMICONDUCTOR MATERIALS
SPUTTERING
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY