Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy
- Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)
- Department of Electrical and Computer Engineering, University of Michigan-Dearborn, Dearborn, Michigan 48128 (United States)
- Microsystems Engineering, Rochester Institute of Technology, Rochester, New York 14623 (United States)
- Photonics Laboratory, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)
GaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In{sub 0.3}Ga{sub 0.7}N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In{sub 0.3}Ga{sub 0.7}N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively.
- OSTI ID:
- 22217789
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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