Reduction of phosphorus diffusion in germanium by fluorine implantation
Abstract
The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of F{sub n}V{sub m} clusters in the F-amorphized Ge layer. A fraction of these F{sub n}V{sub m} clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization ofmore »
- Authors:
- School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)
- Publication Date:
- OSTI Identifier:
- 22217777
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 114; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; DIFFUSION; ELECTRIC CONTACTS; FLUORINE; GERMANIUM; INTERSTITIALS; ION IMPLANTATION; ION MICROPROBE ANALYSIS; MASS SPECTRA; MASS SPECTROSCOPY; PHOSPHORUS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES
Citation Formats
El Mubarek, H. A. W. Reduction of phosphorus diffusion in germanium by fluorine implantation. United States: N. p., 2013.
Web. doi:10.1063/1.4847555.
El Mubarek, H. A. W. Reduction of phosphorus diffusion in germanium by fluorine implantation. United States. https://doi.org/10.1063/1.4847555
El Mubarek, H. A. W. 2013.
"Reduction of phosphorus diffusion in germanium by fluorine implantation". United States. https://doi.org/10.1063/1.4847555.
@article{osti_22217777,
title = {Reduction of phosphorus diffusion in germanium by fluorine implantation},
author = {El Mubarek, H. A. W.},
abstractNote = {The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of F{sub n}V{sub m} clusters in the F-amorphized Ge layer. A fraction of these F{sub n}V{sub m} clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization of enhanced Ge n-type devices.},
doi = {10.1063/1.4847555},
url = {https://www.osti.gov/biblio/22217777},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 22,
volume = 114,
place = {United States},
year = {Sat Dec 14 00:00:00 EST 2013},
month = {Sat Dec 14 00:00:00 EST 2013}
}