Controlled fabrication of Si nanocrystal delta-layers in thin SiO{sub 2} layers by plasma immersion ion implantation for nonvolatile memories
- CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse Cedex 04 (France)
- IBS, Rue G Imbert Prolongée, ZI Peynier-Rousset, 13790 Peynier (France)
- NCSRD, Terma Patriarchou Gregoriou, 15310 Aghia Paraskevi (Greece)
- ICube, 23 Rue du Loess, 67037 Strasbourg Cedex 2 (France)
Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO{sub 2} films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories.
- OSTI ID:
- 22217766
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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