On quantitative analysis of interband recombination dynamics: Theory and application to bulk ZnO

Journal Article · Mon Dec 09 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4847615· OSTI ID:22217751

Lettieri, S. ^[1]; Capello, V.; Santamaria, L. ^[2]; Maddalena, P. ^[1]

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1. Institute for Superconductors, Oxides and Innovative Materials, National Research Council (CNR-SPIN), U.O.S. Napoli, Via Cintia, I-80126 Napoli (Italy)
2. Physics Department, University of Naples “Federico II,” Via Cintia I-80126 Napoli (Italy)

The issue of the quantitative analysis of time-resolved photoluminescence experiments is addressed by developing and describing two approaches for determination of unimolecular lifetime, bimolecular recombination coefficient, and equilibrium free-carrier concentration, based on a quite general second-order expression of the electron-hole recombination rate. Application to the case of band-edge emission of ZnO single crystals is reported, evidencing the signature of sub-nanosecond second-order recombination dynamics for optical transitions close to the interband excitation edge. The resulting findings are in good agreement with the model prediction and further confirm the presence, formerly evidenced in literature by non-optical methods, of near-surface conductive layers in ZnO crystals with sheet charge densities of about 3–5×10{sup 13} cm{sup −2}.

• OSTI ID: 22217751
• Journal Information: Applied Physics Letters, Vol. 103, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
36 MATERIALS SCIENCE
CARRIER DENSITY
CARRIERS
CHARGE DENSITY
CONCENTRATION RATIO
EXCITATION
HOLES
MASS
MONOCRYSTALS
PHOTOLUMINESCENCE
RECOMBINATION
SEMICONDUCTOR MATERIALS
SURFACES
TIME RESOLUTION
ZINC OXIDES