Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition

Journal Article · Sat Sep 15 00:00:00 EDT 2012 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2012.05.056· OSTI ID:22215714

Li, Yang ^[1]; Zhang, Yinzhu ^[1]; He, Haiping; Ye, Zhizhen; Jiang, Jie; Lu, Jianguo; Huang, Jingyun ^[1]

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1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

Highlights: ► Unique m-plane ZnO films were deposited on m-plane sapphire substrate by PLD. ► The epitaxial relationship between the film and the substrate was studied. ► The surface morphology showed stripes due to in-plane anisotropy. ► PL spectra showed strong NBE emission and weak deep level emission. -- Abstract: Non-polar ZnO thin films were deposited on m-plane sapphire substrates by pulsed laser deposition at various temperatures from 300 to 700 °C. The effects of growth temperature on surface morphology, structural, electrical, and optical properties of the films were investigated. All the films exhibited unique m-plane orientation indicated by X-ray diffraction and transmission electron microscopy. Based on the scanning electron microscopy and atomic force microscopy, the obtained films had smooth and highly anisotropic surface, and the root mean square roughness was less than 10 nm above 500 °C. The maximum electron mobility was ∼18 cm{sup 2}/V s, with resistivity of ∼0.26 Ω cm for the film grown at 700 °C. Room temperature photoluminescence of the m-plane films was also investigated.

• OSTI ID: 22215714
• Journal Information: Materials Research Bulletin, Vol. 47, Issue 9; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
ATOMIC FORCE MICROSCOPY
CRYSTAL STRUCTURE
DEPOSITS
ELECTRON MOBILITY
ENERGY BEAM DEPOSITION
EPITAXY
LASER RADIATION
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PULSED IRRADIATION
SAPPHIRE
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
SURFACES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ZINC OXIDES