A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In{sub 0.50}Ga{sub 0.50}As/GaAs quantum dot infrared photodetector with quaternary In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As capping
- Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra (India)
Highlights: ► We investigated the effect of ex situ annealing on InGaAs/GaAs QDIP with InAlGaAs layer. ► As-grown defect was removed by using post-growth annealing treatment. ► Increase in the compressive strain due to annealing is calculated from XRD curve. ► Three-fold enhancement in responsivity is observed in the QDIPs annealed at 650 °C. ► Two-fold enhancement in D* is observed sample annealed at 650 °C compared to as grown. -- Abstract: The effect of post-growth rapid thermal annealing on 35-layer In{sub 0.50}Ga{sub 0.50}As/GaAs quantum dot infrared photodetector (QDIP) with quaternary In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As capping has been investigated. Transmission electron microscopy showed some as-grown defects were removed by post growth annealing treatment. An increase in the compressive strain in the heterostructure due to annealing was identified from X-ray diffraction curve. A two-color photoresponse in the long-wave region (8.5 and 10.2 μm) was observed in both as-grown device and those annealed at 650 °C temperature. A three-fold enhancement in peak responsivity was observed in the QDIPs annealed at 650 °C (1.19 A/W) compared to that in the as-grown (0.34 A/W). Detectivity also increased by two fold from as-grown to 650 °C annealed device. The changes are attributed to the removal of as-grown defects and dislocations during epitaxial growth. These removals changed the confinement potential profile, which resulted in an improvement in the detectivity and responsivity of the annealed sample.
- OSTI ID:
- 22215568
- Journal Information:
- Materials Research Bulletin, Vol. 47, Issue 11; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors
Epitaxial metastable Ge{sub 1-y}C{sub y} (y{<=}0.02) alloys grown on Ge(001) from hyperthermal beams: C incorporation and lattice sites