skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effects of hydrogen atmosphere on pulsed-DC sputtered nanocrystalline Si:H films

Abstract

Highlights: ► Nanocrystalline silicon films were made by pulsed-DC magnetron sputtering. ► A threshold hydrogen concentration was required. ► High defect density due to ion bombardment and oxygen contamination caused low conductivity. -- Abstract: Hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared by a pulsed-DC magnetron sputtering method under an atmosphere of hydrogen/argon mixture. The effects of hydrogen concentration on the structural and electrical properties of the films were systematically investigated using grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, and conductivity measurement. A threshold hydrogen concentration of about 70% was found necessary before any crystallinity was detectable. The deposition rate decreased monotonically with increasing hydrogen concentration, while the conductivity varied with crystallite size. The abnormally low conductivity level of these nc-Si:H films was due to the extraordinarily high defect density, which was attributed both to the enhanced ion bombardment from the pulsed-DC plasma and to the oxygen contamination from the target.

Authors:
;  [1]
  1. Department of Materials Engineering, Mingchi University of Technology, 84 Gungjuan Rd., Taishan, Taipei 24301, Taiwan (China)
Publication Date:
OSTI Identifier:
22215535
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 47; Journal Issue: 10; Conference: IFFM2011: 2011 international forum on functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011, AFM-2: 2. special symposium on advances in functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTALS; DENSITY; DEPOSITION; ELECTRICAL PROPERTIES; FILMS; HYDROGEN; NANOSTRUCTURES; OXYGEN; RAMAN SPECTROSCOPY; SILICON; X-RAY DIFFRACTION

Citation Formats

Cherng, J.S., E-mail: cherng@mail.mcut.edu.tw, Center for Thin Film Technologies and Applications, Mingchi University of Technology, 84 Gungjuan Rd., Taishan, Taipei 24301, Taiwan, Chang, S. H., and Hong, S. H. Effects of hydrogen atmosphere on pulsed-DC sputtered nanocrystalline Si:H films. United States: N. p., 2012. Web. doi:10.1016/J.MATERRESBULL.2012.04.108.
Cherng, J.S., E-mail: cherng@mail.mcut.edu.tw, Center for Thin Film Technologies and Applications, Mingchi University of Technology, 84 Gungjuan Rd., Taishan, Taipei 24301, Taiwan, Chang, S. H., & Hong, S. H. Effects of hydrogen atmosphere on pulsed-DC sputtered nanocrystalline Si:H films. United States. https://doi.org/10.1016/J.MATERRESBULL.2012.04.108
Cherng, J.S., E-mail: cherng@mail.mcut.edu.tw, Center for Thin Film Technologies and Applications, Mingchi University of Technology, 84 Gungjuan Rd., Taishan, Taipei 24301, Taiwan, Chang, S. H., and Hong, S. H. 2012. "Effects of hydrogen atmosphere on pulsed-DC sputtered nanocrystalline Si:H films". United States. https://doi.org/10.1016/J.MATERRESBULL.2012.04.108.
@article{osti_22215535,
title = {Effects of hydrogen atmosphere on pulsed-DC sputtered nanocrystalline Si:H films},
author = {Cherng, J.S., E-mail: cherng@mail.mcut.edu.tw and Center for Thin Film Technologies and Applications, Mingchi University of Technology, 84 Gungjuan Rd., Taishan, Taipei 24301, Taiwan and Chang, S. H. and Hong, S. H.},
abstractNote = {Highlights: ► Nanocrystalline silicon films were made by pulsed-DC magnetron sputtering. ► A threshold hydrogen concentration was required. ► High defect density due to ion bombardment and oxygen contamination caused low conductivity. -- Abstract: Hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared by a pulsed-DC magnetron sputtering method under an atmosphere of hydrogen/argon mixture. The effects of hydrogen concentration on the structural and electrical properties of the films were systematically investigated using grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, and conductivity measurement. A threshold hydrogen concentration of about 70% was found necessary before any crystallinity was detectable. The deposition rate decreased monotonically with increasing hydrogen concentration, while the conductivity varied with crystallite size. The abnormally low conductivity level of these nc-Si:H films was due to the extraordinarily high defect density, which was attributed both to the enhanced ion bombardment from the pulsed-DC plasma and to the oxygen contamination from the target.},
doi = {10.1016/J.MATERRESBULL.2012.04.108},
url = {https://www.osti.gov/biblio/22215535}, journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 10,
volume = 47,
place = {United States},
year = {Mon Oct 15 00:00:00 EDT 2012},
month = {Mon Oct 15 00:00:00 EDT 2012}
}