Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates

Journal Article · Mon Oct 15 00:00:00 EDT 2012 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2012.04.044· OSTI ID:22215514

Park, Jinsub ^[1]; Yao, Takafumi ^[2]

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1. Department of Electronic Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
2. Center for Interdisciplinary Research, Tohoku University, Sendai 980-855 (Japan)

We report on the fabrication and characterization of periodically polarity inverted (PPI) ZnO heterostructures on (0 0 0 1) Al{sub 2}O{sub 3} substrates. For the periodically inverted array of ZnO polarity, CrN and Cr{sub 2}O{sub 3} polarity selection buffer layers are used for the Zn- and O-polar ZnO films, respectively. The change of polarity and period in fabricated ZnO structures is evaluated by diffraction patterns and polarity sensitive piezo-response microscopy. Finally, PPI ZnO structures with subnanometer scale period are demonstrated by using holographic lithography and regrowth techniques.

• OSTI ID: 22215514
• Journal Information: Materials Research Bulletin, Vol. 47, Issue 10; Conference: IFFM2011: 2011 international forum on functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011, AFM-2: 2. special symposium on advances in functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ATOMIC FORCE MICROSCOPY
CHROMATES
CHROMIUM NITRIDES
CHROMIUM OXIDES
DIFFRACTION
EPITAXY
FABRICATION
LAYERS
PERIODICITY
SAPPHIRE
SEMICONDUCTOR MATERIALS
SUBSTRATES
THIN FILMS
ZINC OXIDES