Crystal growth and photoluminescence characteristics of Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} thin films grown by pulsed laser deposition
- Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of)
Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films were deposited on Al{sub 2}O{sub 3} (0 0 0 1) substrates by pulsed laser deposition. The films were grown at various oxygen pressures ranging from 100 to 400 mTorr. The crystallinity and surface morphology of the films were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. XRD and AFM respectively showed that the Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films had a zircon structure and consisted of homogeneous grains ranging from 100 to 400 nm depending on the deposition conditions. The radiation emitted was dominated by a red emission peak at 620 nm. The maximum PL intensity of the Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films grown at 300 mTorr was increased by a factor of 1.3 compared to that of Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films grown at 100 mTorr. The crystallinity, surface roughness and photoluminescence of the thin-film phosphors were strongly dependent on the deposition conditions, in particular, the oxygen partial pressure.
- OSTI ID:
- 22215513
- Journal Information:
- Materials Research Bulletin, Vol. 47, Issue 10; Conference: IFFM2011: 2011 international forum on functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011, AFM-2: 2. special symposium on advances in functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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