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Title: Synthesis of TiO{sub 2} thin films using single molecular precursors by MOCVD method for dye-sensitized solar cells application and study on film growth mechanism

Journal Article · · Materials Research Bulletin
;  [1];  [1]
  1. Department of Chemistry and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

For dye-sensitized solar cells application, in this study, we have synthesized TiO{sub 2} thin films at deposition temperature in the range of 300–750 °C by metalorganic chemical vapor deposition (MOCVD) method. Titanium(IV) isopropoxide, (TIP, Ti(O{sup i}Pr){sub 4}) and Bis(dimethylamido)titanium diisopropoxide, (BTDIP, (Me{sub 2}N){sub 2}Ti(O{sup i}Pr){sub 2}) were used as single source precursors that contain Ti and O atoms in the same molecule, respectively. Crack-free, highly oriented TiO{sub 2} polycrystalline thin films with anatase phase were deposited on Si(1 0 0) with TIP at temperature as low as 450 °C. XRD and TED data showed that below 500 °C, the TiO{sub 2} thin films were dominantly grown in the [2 1 1] direction on Si(1 0 0), whereas with increasing the deposition temperature to 700 °C, the main film growth direction was changed to [2 0 0]. Above 700 °C, however, rutile phase TiO{sub 2} thin films have only been obtained. In the case of BTDIP, on the other hand, only amorphous film was grown on Si(1 0 0) below 450 °C while a highly oriented anatase TiO{sub 2} film in the [2 0 0] direction was obtained at 500 °C. With further increasing deposition temperatures over 600 °C, the main film growth direction shows a sequential change from rutile [1 0 1] to rutile [4 0 0], indicating a possibility of getting single crystalline TiO{sub 2} film with rutile phase. This means that the precursor together with deposition temperature can be one of important parameters to influence film growth direction, crystallinity as well as crystal structure. To investigate the CVD mechanism of both precursors in detail, temperature dependence of growth rate was also carried out, and we then obtained different activation energy of deposition to be 77.9 and 55.4 kJ/mol for TIP and BTDIP, respectively. Also, we are tested some TiO{sub 2} film synthesized with BTDIP precursor to apply dye-sensitized solar cell.

OSTI ID:
22215486
Journal Information:
Materials Research Bulletin, Vol. 47, Issue 10; Conference: IFFM2011: 2011 international forum on functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011, AFM-2: 2. special symposium on advances in functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
Country of Publication:
United States
Language:
English

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