Effects of pyrolysis conditions on dielectric properties of PLZT films derived from a polyvinylpyrrolidone-modified sol-gel process
- Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439 (United States)
Graphical abstract: SEM images showing the surface morphology of PLZT films derived from solutions with various PVP content and treated with either RTA (rapid thermal annealing) or SPT (step-wise preheat treatment) process. Highlights: Black-Right-Pointing-Pointer High-quality PLZT films were fabricated by using a polyvinylpyrrolidone-modified sol-gel method. Black-Right-Pointing-Pointer Improved film density and integrity was achieved by employing a novel step-wise preheat treatment (SPT) process. Black-Right-Pointing-Pointer Enhanced dielectric properties were correlated to the improved microstructures as a result of the SPT process. -- Abstract: Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films were deposited on platinized silicon substrates (Pt/Si) using a polyvinylpyrrolidone (PVP) modified sol-gel method. Pyrolysis of the green films was conducted via two methods: rapid thermal annealing (RTA) and a step-wise preheat treatment (SPT). Microstructure analysis and dielectric property characterization were performed on samples treated by these two methods. Results showed that the SPT-pyrolyzed films exhibited much better dielectric properties when compared with the RTA-pyrolyzed films. The differences in dielectric properties were correlated to microstructural features caused by the different pyrolysis conditions. High-quality PLZT films with high dielectric constant ( Almost-Equal-To 860 at zero bias) and high breakdown strength ( Almost-Equal-To 2.1 MV/cm) were fabricated under controlled pyrolysis conditions. This work demonstrated the potential application of this material for power electronics in electric drive vehicles.
- OSTI ID:
- 22212481
- Journal Information:
- Materials Research Bulletin, Vol. 47, Issue 3; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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