Temperature dependent photoluminescence investigation of the effect of growth pause induced ripening in InAs/GaAs quantum dot heterostructures
- Dept. of Electrical Engineering, Center for Nanoelectronics, Indian Institute of Technology Bombay, Powai, Mumbai 400076, Maharashtra (India)
Highlights: Black-Right-Pointing-Pointer Self-assembled InAs/GaAs quantum dots were subjected to growth ripening pause. Black-Right-Pointing-Pointer Samples are structurally and optically characterized. Black-Right-Pointing-Pointer Factors affecting the carrier activation energy have been investigated. -- Abstract: Self-assembled InAs/GaAs quantum dot (QD) heterostructures grown by solid state molecular beam epitaxy (MBE) were subjected to growth ripening pause of comparatively shorter durations (0-50 s) at the growth temperature (520 Degree-Sign C). The islands are found to increase in size with the growth pause and correspondingly their density decreases. Though the photoluminescence spectra of the islands subjected to growth pause is found to follow conventional QD systems, a contradiction is noticed in the calculated values of the activation energy of the dots. We ascribed this contradiction due to the poor crystalline quality of the ripened QDs as a result of desorption and sublimation of indium during the pause at high growth temperature.
- OSTI ID:
- 22212474
- Journal Information:
- Materials Research Bulletin, Vol. 47, Issue 3; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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