Structural and electrical properties of ternary Ru-AlN thin films prepared by plasma-enhanced atomic layer deposition
- National Core Research Center for Hybrid Materials Solutions, Pusan National University, 30 Jangjeon-Dong Geumjeong-Gu, Busan 609-735 (Korea, Republic of)
- Measurement and Analysis Team, National NanoFab Center, 335 Gwahakno, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of)
- Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701 (Korea, Republic of)
- Eco Materials and Processing Department, Korea Institute of Industrial Technology, 7-47 Songdo-Dong, Yeonsu-Gu, Incheon 406-840 (Korea, Republic of)
Highlights: Black-Right-Pointing-Pointer Ru-AlN thin films were grown by plasma-enhanced atomic layer deposition (PEALD). Black-Right-Pointing-Pointer Structural properties were systematically investigated by XRD, BF-STEM and EDX. Black-Right-Pointing-Pointer A drastic decrease in resistivity was due to the microstructural change of the films. -- Abstract: Ruthenium-aluminum-nitride (Ru-AlN) thin films were grown by plasma-enhanced atomic layer deposition (PEALD) at 300 Degree-Sign C. The Ru intermixing ratio of Ru-AlN thin films was controlled by the number of Ru unit cycles, while the number of AlN unit cycles was fixed to one cycle. The electrical resistivity of Ru-AlN thin film decreased with increasing the Ru intermixing ratio, but a drastic decrease in electrical resistivity was observed when the Ru intermixing ratio was around 0.58-0.78. Bright-field scanning transmission electron microscope (BF-STEM) and energy-dispersive X-ray spectroscopy (EDX) element mapping analysis revealed that the electrical resistivity of Ru-AlN thin film was strongly dependent on the microstructures as well as on the Ru intermixing ratio. Although the electrical resistivity of Ru-AlN thin films decreased with increasing the Ru intermixing ratio, a drastic decrease in electrical resistivity occurred where the electrical paths formed as a result of the coalescence of Ru nanocrystals.
- OSTI ID:
- 22212469
- Journal Information:
- Materials Research Bulletin, Vol. 47, Issue 3; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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