Photoluminescence properties of Si-N-doped BaAl{sub 12}O{sub 19}:Mn{sup 2+} phosphors for three-dimensional plasma display panels
- Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000 (China)
- College of chemistry and chemical engineering, Lanzhou University, Lanzhou, 730000 (China)
Highlights: Black-Right-Pointing-Pointer The brightness of Si-N-doped BHA phosphor is 119.9% of the un-doped BHA. Black-Right-Pointing-Pointer The decay time of Si-N-doped BHA phosphor is shorter than the un-doped sample. Black-Right-Pointing-Pointer The Si-N doping BHA is expected to be potentially applicable to 3D PDPs. -- Abstract: Si-N-doped BaAl{sub 12}O{sub 19}:Mn{sup 2+} phosphors were synthesized by a conventional solid-state reaction. It reveals that an efficiently host absorption in the vacuum ultraviolet region, which could be ascribed to the restricted Reidinger defects and oxygen vacancies by the Si-N doping. A fortified energy transfer from host to the activators was observed because of the newly formed defect energy levels which generated from the un-equivalence substitution of Si-N for Al-O. The shorter decay time of 4.05 ms was obtained which due to the increased defect concentration. This result indicates that Si-N doping BaAl{sub 12}O{sub 19}:Mn{sup 2+} phosphors would meet the requirements of 3D PDPs.
- OSTI ID:
- 22212398
- Journal Information:
- Materials Research Bulletin, Vol. 47, Issue 1; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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