Effect of annealing in argon on the properties of thermally deposited gallium-oxide films

Journal Article · Thu Aug 15 00:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613080071· OSTI ID:22210575

Vishnikina, V. V.; Zarubin, A. N.; Novikov, V. A.; Petrova, Yu. S.; Tolbanov, O. P.; Tyazhev, A. V.; Tcupiy, S. Y.; Yaskevich, T. M. ^[1]

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1. Tomsk State University, Siberian Physicotechnical Institute (Russian Federation)

The effect of the annealing temperature on the I-V, C-I, and G-V characteristics and transparency of gallium-oxide films is investigated. The films are fabricated by the thermal evaporation of Ga{sub 2}O{sub 3} powder on n-GaAs wafers. It is shown that the films which are amorphous after deposition crystallize upon annealing at temperatures T{sub an} {>=} 800 Degree-Sign C. The electrical characteristics and photoresponse of the V/Ni-GaAs-GaAs-Ga{sub x}O{sub y}-V/Ni samples to visible radiation depend on the structure and phase composition of the films.

• OSTI ID: 22210575
• Journal Information: Semiconductors, Vol. 47, Issue 8; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
DEPOSITS
EVAPORATION
FILMS
GALLIUM ARSENIDES
GALLIUM OXIDES
POWDERS