Features of conduction mechanisms in n-HfNiSn semiconductor heavily doped with a Rh acceptor impurity
- Universitaet Wien, Institut fur Physikalishe Chemie (Austria)
- Ivan Franko Lviv National University (Ukraine)
- National University 'Lvivska Politechnika' (Ukraine)
- CNRS, Institut Neel (France)
The crystal structure and electron-density distribution, as well as the energy, kinetic, and magnetic characteristics of n-HfNiSn intermetallic semiconductor heavily doped with a Rh acceptor impurity in the temperature range T = 80-400 K, in the acceptor-concentration range N{sub A}{sup Rh} Almost-Equal-To 9.5 Multiplication-Sign 10{sup 19}-1.9 Multiplication-Sign 10{sup 21} cm{sup -3} (x = 0.005-0.10), and in magnetic fields H {<=} 10 kG are investigated. It is established that doping is accompanied by a simultaneous decrease in concentration, the elimination of donor-type structural defects (to x Almost-Equal-To 0.02), and an increase in the concentration of acceptor-type structural defects (0 < x {<=} 0.10). The dependence of the degree of semiconductor compensation on temperature is revealed. A model of the spatial arrangement of atoms in HfNi{sub 1-x}Rh{sub x}Sn is proposed, and the results of calculating the electron structure based on this model agree with the results of investigations of the kinetic and magnetic characteristics of the semiconductor. The results are discussed within the context of the Shklovskii-Efros model for a heavily doped and compensated semiconductor.
- OSTI ID:
- 22210550
- Journal Information:
- Semiconductors, Vol. 47, Issue 9; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru
Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y