Local triboelectrification of an n-GaAs surface using the tip of an atomic-force microscope

Journal Article · Sun Sep 15 00:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613090054· OSTI ID:22210547

Goncharov, V. V.; Rudinsky, M. E.; Gutkin, A. A.; Gordeev, N. Yu.; Lantratov, V. M.; Kalyuzhnyy, N. A.; Mintairov, S. A.; Sokolov, R. V.; Konnikov, S. G. ^[1]

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1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

The method of scanning Kelvin-probe microscopy is used to show that the effect of triboelectrification is observed when the tip of an atomic-force microscope interacts with the surface of n-GaAs epitaxial layers. The sign of the change in the potential indicates that the sample surface after triboelectrification becomes more negative. The observed specific features of the phenomena can be attributed to the thermally activated generation of point defects in the vicinity of the sample surface due to deformation caused by the tip.

• OSTI ID: 22210547
• Journal Information: Semiconductors, Vol. 47, Issue 9; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
DEFORMATION
GALLIUM ARSENIDES
LAYERS
POINT DEFECTS
SURFACES