Ultra-low density InAs quantum dots
- St. Petersburg Academic University Russian Academy of Sciences (Russian Federation)
- Ioffe Physical Technical Institute Russian Academy of Sciences (Russian Federation)
- Delft University of Technology, Quantum Transport, Kavli Institute of Nanoscience (Netherlands)
We show that InAs quantum dots (QDs) can be grown by molecular beam epitaxy (MBE) with an ultralow density of sin 10{sup 7} cm{sup -2} without any preliminary or post-growth surface treatment. The strain-induced QD formation proceeds via the standard Stranski-Krastanow mechanism, where the InAs coverage is decreased to 1.3-1.5 monolayers (MLs). By using off-cut GaAs (100) substrates, we facilitate the island nucleation in this subcritical coverage range without any growth interruption. The QD density dependences on the InAs coverage are studied by photoluminescence, atomic force microscopy, transmission electron microscopy, and are well reproduced by the universal double exponential shapes. This method enables the fabrication of InAs QDs with controllable density in the range 10{sup 7}-10{sup 8} cm{sup -2}, exhibiting bright photoluminescence.
- OSTI ID:
- 22210494
- Journal Information:
- Semiconductors, Vol. 47, Issue 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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