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Title: Composite system based on CdSe/ZnS quantum dots and GaAs nanowires

Journal Article · · Semiconductors
 [1];  [2];  [3];  [4];  [5];  [2];  [1];  [4];  [1]
  1. St. Petersburg Academic University-Nanotechnology Research and Education Center, Russian Academy of Sciences (Russian Federation)
  2. St. Petersburg State University, Fock Institute of Physics (Russian Federation)
  3. Max-Planck-Institut fuer Mikrostukturphysik (Germany)
  4. Vavilov State Optical Institute (Russian Federation)
  5. Belarussian State University, Institute for Physicochemical Problems (Belarus)

The possibility of fabricating a composite system based on colloidal CdSe/ZnS quantum dots and GaAs nanowires is demonstrated and the structural and emission properties of this system are investigated by electron microscopy and photoluminescence spectroscopy techniques. The good wettability and developed surface of the nanowire array lead to an increase in the surface density of quantum dots and, as a consequence, in the luminosity of the system in the 600-nm wavelength region. The photoluminescence spectrum of the quantum dots exhibits good temperature stability in the entire range 10-295 K. The impact of surface states on energy relaxation and the role of exciton states in radiative recombination in the quantum dots are discussed.

OSTI ID:
22210490
Journal Information:
Semiconductors, Vol. 47, Issue 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English