Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region
- Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Center for Research and Education (Russian Federation)
- Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
- St. Petersburg Polytechnic University (Russian Federation)
- University of Athens (Greece)
- University of Notre Dame (United States)
- Innolume GmbH (Germany)
Microring cavities (diameter D = 2.7-7 {mu}m) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter D = 6 {mu}m. Lasing up to room temperature is obtained in an optically pumped ring microlaser with a diameter of D = 2.7 {mu}m.
- OSTI ID:
- 22210486
- Journal Information:
- Semiconductors, Vol. 47, Issue 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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