Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals

Journal Article · Tue Oct 15 00:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613100266· OSTI ID:22210482

Bouravleuv, A. D.; Trushkov, Yu. M.; Beznasyuk, D. V.; Samsonenko, Yu. B.; Cirlin, G. E. ^[1]

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1. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Center (Russian Federation)

The effect of an arsenic flux on the growth rate of self-catalytic (Ga,Mn)As nanowire crystals is studied. It is shown that, at low arsenic fluxes, nanowire-crystal growth is limited by the crystallization rate of the material below the droplet. However, at high arsenic fluxes, the growth kinetics are controlled by gallium transport into the droplet. It is experimentally demonstrated that, at low arsenic fluxes, the dependence of the nanowire length on the nanowire diameter is a steadily increasing function adequately described by Givargizov-Chernov's model. At the same time, a steadily decreasing diffusion dependence is observed at high arsenic fluxes.

• OSTI ID: 22210482
• Journal Information: Semiconductors, Vol. 47, Issue 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC
CRYSTALLIZATION
CRYSTALS
DROPLETS
GALLIUM
MOLECULAR BEAM EPITAXY