Models of the formation of oxide phases in nanostructured materials based on lead chalcogenides subjected to treatment in oxygen and iodine vapors
- St. Petersburg State Electrotechnical University 'LETI' (Russian Federation)
Model concepts concerning control over the formation of oxide layers during the course of oxidation are developed on the basis of experimental results of studies of systematic features of the formation of nanostructured layers after diffusion annealing. Data on a variation in the composition of oxide phases as the extent of deviation from stoichiometry is changed in the initial lead chalcogenide are presented. Model concepts related to the possibility of varying the thickness of the coating oxide phases using annealing in an oxygen-containing medium are developed. It is shown that annealing in an iodine atmosphere ensures the effective penetration of oxygen into the grains, which is necessary for an increase in the photoluminescence efficiency.
- OSTI ID:
- 22210481
- Journal Information:
- Semiconductors, Vol. 47, Issue 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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