Pseudomorphic GeSn/Ge (001) heterostructures

Journal Article · Fri Nov 15 00:00:00 EST 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613110225· OSTI ID:22210449

Talalaev, V. G. ^[1]; Werner, P. ^[2]

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1. Martin Luther University Halle-Wittenberg, ZIK SiLi-nano (Germany)
2. Max Planck Institute of Microstructure Physics (Germany)

The synthesis of pseudomorphic GeSn heterostructures on a Ge (001) substrate by molecular-beam epitaxy is described. Investigations by transmission electron microscopy show that the GeSn layers are defect free and possess cubic diamondlike structure. Photoluminescence spectroscopy reveals interband radiative recombination in the GeSn quantum wells, which is identified as indirect transitions between the subbands of heavy electrons and heavy holes. On the basis of experimental data and modeling of the band structure of pseudomorphic GeSn compounds, the lower boundary of the bowing parameter for the indirect band gap is estimated as b{sub L} {>=} 1.47 eV.

• OSTI ID: 22210449
• Journal Information: Semiconductors, Vol. 47, Issue 11; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
EV RANGE
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM WELLS
SIMULATION
SPECTROSCOPY
SUBSTRATES
SYNTHESIS
TRANSMISSION ELECTRON MICROSCOPY