Relaxation kinetics of impurity photoconductivity in p-Si:B with various levels of doping and degrees of compensation in high electric fields

Journal Article · Fri Nov 15 00:00:00 EST 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613110146· OSTI ID:22210447

Morozov, S. V.; Kudryavtsev, K. E.; Gavrilenko, V. I.; Kozlov, D. V. ^[1]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

The relaxation of impurity photoconductivity in p-Si:B crystals subjected to pulsed optical excitation by a narrow-band continuously adjusted source of radiation in the range of 'heating' (10-500 V/cm) electric fields is studied. A variation of dependence of the relaxation time on the electric field E at E > 75 V/cm due to the additional relaxation processes with the emission of an optical phonon is observed. The dependence of the rates of carrier relaxation on the intensity and wavelength of the excitation radiation indicates also that there is a long-lived excited state, which plays the role of a metastable trap level upon the relaxation of charge carriers.

• OSTI ID: 22210447
• Journal Information: Semiconductors, Vol. 47, Issue 11; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
CRYSTALS
ELECTRIC FIELDS
EMISSION
EXCITATION
EXCITED STATES
IMPURITIES
PHOTOCONDUCTIVITY
RELAXATION TIME