Study of GaP single crystal layers grown on GaN by MOCVD
- Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631 (China)
- Neo-Neon Holdings Ltd., He Shan 529728 (China)
- APT Electronics Ltd, Nansha District, Guangzhou 511458 (China)
Highlights: {yields} We investigated the growth of GaP layers on GaN by MOCVD. {yields} A single crystal GaP layer could be grown on GaN. {yields} The V/III ratio played an important role to improve GaP layer quality. {yields} The GaP:Mg layer with hole concentration of 4.2 x 10{sup 18} cm{sup -3} was obtained. -- Abstract: The performance of GaN based devices could possibly be improved by utilizing the good p-type properties of GaP layer and it provides the possibility of the integration of InAlGaN and AlGaInP materials to produce new devices, if high quality GaP compounds can be grown on III-nitride compounds. In this paper, the growth of GaP layers on GaN by metalorganic chemical vapor deposition (MOCVD) has been investigated. The results show that the GaP low temperature buffer layer can provide a high density of nucleation sites for high temperature GaP growth. Using a 40 nm thick GaP buffer layer, a single crystal GaP layer, whose full-width at half-maximum of the (1 1 1) plane measured by double crystal X-ray diffraction is 580'', can be grown on GaN. The V/III ratio plays an important role in the GaP layer growth and an appropriate V/III ratio can improve the quality of GaP layer. The GaP:Mg layer with hole carrier concentration of 4.2 x 10{sup 18} cm{sup -3} has been obtained.
- OSTI ID:
- 22210112
- Journal Information:
- Materials Research Bulletin, Vol. 46, Issue 11; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
Similar Records
Metalorganic chemical vapor deposition of ZnGeN2 films on GaN: effects of cation stoichiometry on surface morphology and crystallinity
Low pressure MOCVD (metalorganic chemical vapor deposition) growth of InSb