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Title: In situ derivation of sulfur activated TiO{sub 2} nano porous layers through pulse-micro arc oxidation technology

Journal Article · · Materials Research Bulletin
 [1];  [2];  [1]
  1. School of Metallurgy and Materials Engineering, Iran University of Science and Technology, P.O. Box 16845-161, Tehran (Iran, Islamic Republic of)
  2. Department of Physics, Sharif University of Technology, P.O. Box 11155-9161, Tehran (Iran, Islamic Republic of)

Highlights: {yields} S-TiO{sub 2} layers were grown by MAO technique under pulse current for the first time. {yields} Effect of growth parameters on chemical composition, topography, and morphology of the layers was studied. {yields} A correlation between photocatalytic performance and growth conditions was proposed. -- Abstract: Micro arc oxidation technique, as a facile and efficient process, was employed to grow sulfur doped titania porous layers. This research sheds light on the photocatalytic performance of the micro arc oxidized S-TiO{sub 2} nano-porous layers fabricated under pulse current. Morphological and topographical studies, performed by SEM and AFM techniques, revealed that increasing the frequency and/or decreasing the duty cycle resulted in formation of finer pores and smoother surfaces. XRD and XPS results showed that the layers consisted of anatase and rutile phases whose fraction was observed to change depending on the synthesis conditions. The highest anatase relative content was obtained at the frequency of 500 Hz and the duty cycle of 5%. Furthermore, photocatalytic activity of the layers was examined by measuring the decomposition rate of methylene blue under both ultraviolet and visible photo irradiations. Maximum photodegradation reaction rate constants over the pulse-grown S-TiO{sub 2} layers were respectively measured as 0.0202 and 0.0110 min{sup -1} for ultraviolet and visible irradiations.

OSTI ID:
22210065
Journal Information:
Materials Research Bulletin, Vol. 46, Issue 10; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
Country of Publication:
United States
Language:
English