Synthesis of c-axis oriented AlN thin films on different substrates: A review
- Instituto de Sistemas Optoelectronicos y Microtecnologia, ETSI de Telecomunicacion Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N{sub 2} gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.
- OSTI ID:
- 22207359
- Journal Information:
- Materials Research Bulletin, Vol. 45, Issue 9; Other Information: Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
Similar Records
The impact of argon admixture on the c-axis oriented growth of direct current magnetron sputtered Sc{sub x}Al{sub 1−x}N thin films
Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering