Low-temperature sintering of temperature-stable LaNbO{sub 4} microwave dielectric ceramics
- Nano-Materials Research Center, Nano-Science Research Division, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
- Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)
- Department of Materials Science and Engineering, Ajou University, Suwon 443-749 (Korea, Republic of)
We demonstrate the correlation between sintering behavior and microstructural observations in low-temperature sintered, LaNbO{sub 4} microwave ceramics. Small CuO additions to LaNbO{sub 4} significantly lowered the sintering temperature from 1250 to 950 {sup o}C. To elucidate the sintering mechanism, the internal microstructure of the sample manipulated by a focused ion beam (FIB) was investigated using transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS). LaNbO{sub 4} with 3 wt% CuO sintered at 950 {sup o}C for 2 h possessed the following excellent microwave dielectric properties: a quality factor (Qxf) of 49,000 GHz, relative dielectric constant ({epsilon}{sub r}) of 19.5, and temperature coefficient of resonant frequency ({tau}{sub f}) of 1 ppm/{sup o}C. The ferroelastic phase transformation was also investigated using in situ X-ray diffraction (XRD) to explain the variation of {tau}{sub f} in low-temperature sintered LaNbO{sub 4} as a function of CuO content.
- OSTI ID:
- 22202527
- Journal Information:
- Materials Research Bulletin, Vol. 45, Issue 1; Other Information: Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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