Population dynamics in epitaxial Er{sub 2}O{sub 3} thin films grown on Si(111)
- NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)
- Graduate School of Engineering, Hokkaido University, Sapporo, Hokkaido 001-0021 (Japan)
We grow single crystal erbium-oxide (Er{sub 2}O{sub 3}) epitaxially on a Si (111) substrate by using molecular beam epitaxy and investigate the population dynamics in Er{sup 3+} ions for the coherent manipulation of the population in Er{sub 2}O{sub 3}. Sharp and discrete Stark energy levels of the {sup 4}I{sub 13/2} manifold as small as 200 {mu}eV are observed with inhomogeneous broadening caused by the uniform crystal field of the epitaxial Er{sub 2}O{sub 3}. We also experimentally determine the time constant of the resonant population transfer between spatially distant Er{sup 3+}-ion sites, which is limited to the manipulation time of the population in the Er{sub 2}O{sub 3} crystals. Using selective excitation of the Stark level in the {sup 4}I{sub 13/2} manifold, we obtain the energy transfer times between spatially distant Er{sup 3+} ions, and they are about 2 {mu}s between sites whose crystallographic symmetry is different and 10 {mu}s between sites whose symmetry is the same.
- OSTI ID:
- 22163035
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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