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Title: Counting molecular-beam grown graphene layers

Abstract

We have used the ratio of the integrated intensity of graphene's Raman G peak to that of the silicon substrate's first-order optical phonon peak, accurately to determine the number of graphene layers across our molecular-beam (MB) grown graphene films. We find that these results agree well both, with those from our own exfoliated single and few-layer graphene flakes, and with the results of Koh et al.[ACS Nano 5, 269 (2011)]. We hence distinguish regions of single-, bi-, tri-, four-layer, etc., graphene, consecutively, as we scan coarsely across our MB-grown graphene. This is the first, but crucial, step to being able to grow, by such molecular-beam-techniques, a specified number of large-area graphene layers, to order.

Authors:
 [1];  [2];  [2];  [3];  [4]
  1. School of Physics, University of Exeter, Exeter EX4 4QL (United Kingdom)
  2. Department of Physics, Columbia University, New York, New York 10027 (United States)
  3. MBE Lab, IMM-Instituto de Microelectronica de Madrid (CNM-CSIC), Madrid, E-28760 (Spain)
  4. Electrical Engineering Department, Princeton University, New Jersey 08544 (United States)
Publication Date:
OSTI Identifier:
22163030
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 102; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; FILMS; GRAPHENE; LAYERS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHONONS; RAMAN SPECTRA; SILICON; SUBSTRATES

Citation Formats

Plaut, Annette S., Wurstbauer, Ulrich, Pinczuk, Aron, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, Garcia, Jorge M., and Pfeiffer, Loren N. Counting molecular-beam grown graphene layers. United States: N. p., 2013. Web. doi:10.1063/1.4811708.
Plaut, Annette S., Wurstbauer, Ulrich, Pinczuk, Aron, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, Garcia, Jorge M., & Pfeiffer, Loren N. Counting molecular-beam grown graphene layers. United States. https://doi.org/10.1063/1.4811708
Plaut, Annette S., Wurstbauer, Ulrich, Pinczuk, Aron, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, Garcia, Jorge M., and Pfeiffer, Loren N. 2013. "Counting molecular-beam grown graphene layers". United States. https://doi.org/10.1063/1.4811708.
@article{osti_22163030,
title = {Counting molecular-beam grown graphene layers},
author = {Plaut, Annette S. and Wurstbauer, Ulrich and Pinczuk, Aron and Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 and Garcia, Jorge M. and Pfeiffer, Loren N.},
abstractNote = {We have used the ratio of the integrated intensity of graphene's Raman G peak to that of the silicon substrate's first-order optical phonon peak, accurately to determine the number of graphene layers across our molecular-beam (MB) grown graphene films. We find that these results agree well both, with those from our own exfoliated single and few-layer graphene flakes, and with the results of Koh et al.[ACS Nano 5, 269 (2011)]. We hence distinguish regions of single-, bi-, tri-, four-layer, etc., graphene, consecutively, as we scan coarsely across our MB-grown graphene. This is the first, but crucial, step to being able to grow, by such molecular-beam-techniques, a specified number of large-area graphene layers, to order.},
doi = {10.1063/1.4811708},
url = {https://www.osti.gov/biblio/22163030}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 24,
volume = 102,
place = {United States},
year = {Mon Jun 17 00:00:00 EDT 2013},
month = {Mon Jun 17 00:00:00 EDT 2013}
}