Direct observation of charge transfer region at interfaces in graphene devices
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
- Synchrotron Radiation Research Organization, The University of Tokyo, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)
- Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
- Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
Nanoscale spectromicroscopic characterizing technique is indispensable for realization of future high-speed graphene transistors. Highly spatially resolved soft X-ray photoelectron microscopy measurements have been performed using our '3D nano-ESCA' (three-dimensional nanoscale electron spectroscopy for chemical analysis) equipment in order to investigate the local electronic states at interfaces in a graphene device structure. We have succeeded in detecting a charge transfer region at the graphene/metal-electrode interface, which extends over {approx}500 nm with the energy difference of 60 meV. Moreover, a nondestructive depth profiling reveals the chemical properties of the graphene/SiO{sub 2}-substrate interface.
- OSTI ID:
- 22163029
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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