Radiation hardness of graphene and MoS{sub 2} field effect devices against swift heavy ion irradiation
- Fakultaet fuer Physik and CeNIDE, Universitaet Duisburg-Essen, Lotharstr. 1, 47048 Duisburg (Germany)
- Solid State Electronics Department and CeNIDE, University of Duisburg-Essen, Lotharstr. 55, 47048 Duisburg (Germany)
- Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)
- GSI Helmholtz Centre, Planckstr. 1, 64291 Darmstadt (Germany)
We have investigated the deterioration of field effect transistors based on two-dimensional materials due to irradiation with swift heavy ions. Devices were prepared with exfoliated single layers of MoS{sub 2} and graphene, respectively. They were characterized before and after irradiation with 1.14 GeV U{sup 28+} ions using three different fluences. By electrical characterization, atomic force microscopy, and Raman spectroscopy, we show that the irradiation leads to significant changes of structural and electrical properties. At the highest fluence of 4 Multiplication-Sign 10{sup 11} ions/cm{sup 2}, the MoS{sub 2} transistor is destroyed, while the graphene based device remains operational, albeit with an inferior performance.
- OSTI ID:
- 22162996
- Journal Information:
- Journal of Applied Physics, Vol. 113, Issue 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FIELD EFFECT TRANSISTORS
GEV RANGE 01-10
GRAPHENE
HEAVY IONS
ION BEAMS
IRRADIATION
MOLYBDENUM SULFIDES
MULTICHARGED IONS
PERFORMANCE
RADIATION HARDENING
RAMAN SPECTRA
RAMAN SPECTROSCOPY
URANIUM IONS