Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis
- Departamento de Fisica, Universidade Federal de Minas Gerais, Av. Antonio Carlos, 6627, 31270-901 Belo Horizonte (Brazil)
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
Single-layer graphene structures and devices are commonly defined using reactive ion etching and plasma etching with O{sub 2} or Ar as the gaseous etchants. Although optical microscopy and Raman spectroscopy are widely used to determine the appropriate duration of dry etching, additional characterization with atomic force microscopy (AFM) reveals that residual graphene and/or etching byproducts persist beyond the point where the aforementioned methods suggest complete graphene etching. Recognizing that incomplete etching may have deleterious effects on devices and/or downstream processing, AFM characterization is used here to determine optimal etching conditions that eliminate graphene dry etching residues.
- OSTI ID:
- 22162923
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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