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Title: A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu{sub 2}O/CuO thin films with resistive switching potential

Abstract

The achievement of a reproducible and controlled deposition of partitioned Cu{sub 2}O/CuO thin films by techniques compatible with ULSI processing like reactive magnetron sputtering has been reported as an outstanding challenge in the literature. This phase partitioning underlies their performance as reversible resistive memory switching devices in advanced microelectronic applications of the future. They are currently fabricated by thermal oxidation and chemical methods. We have used a combination of an understanding from plasma chemistry, thermo-kinetics of ions, and rf power variation during deposition to successfully identify a processing window for preparing partitioned Cu{sub 2}O/CuO films. The production of a core rich Cu{sub 2}O and surface rich Cu{sub 2}O/CuO mixture necessary for oxygen migration during resistive switching is confirmed by XRD peaks, Fourier transform infra red Cu (I)-O vibrational modes, XPS Cu 2P{sub 3/2} and O 1S peak fitting, and a comparison of satellite peak ratio's in Cu 2P{sub 3/2} fitted peaks. We are proposing based on the findings reported in this paper that an XPS satellite peak intensity(I{sub s}) to main peak intensity ratio (I{sub m}) {<=} 0.45 as an indicator of a core rich Cu{sub 2}O and surface rich Cu{sub 2}O/CuO formation in our prepared films. CuO is solelymore » responsible for the satellite peaks. This is explained on the basis that plasma dissociation of oxygen will be limited to the predominant formation of Cu{sub 2}O under certain plasma deposition conditions we have identified in this paper, which also results in a core-rim phase partitioning. The deposited films also followed a Volmer-Weber columnar growth mode, which could facilitate oxygen vacancy migration and conductive filaments at the columnar interfaces. This is further confirmed by optical transmittance and band-gap measurements using spectrophotometry. This development is expected to impact on the early adoption of copper oxide based resistive memory electronic switching devices in advanced electronic devices of the future. The relative abundance of copper is another major complementary driver for the interest in copper oxide films.« less

Authors:
;  [1]
  1. Thin Film Centre, School of Engineering, University of the West of Scotland, Paisley Campus PA1 2BE, Scotland (United Kingdom)
Publication Date:
OSTI Identifier:
22162905
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 113; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COPPER OXIDES; DEPOSITION; DISSOCIATION; ELECTRIC CONDUCTIVITY; FILAMENTS; FOURIER TRANSFORMATION; INFRARED SPECTRA; INTERFACES; MAGNETRONS; MIGRATION; RANDOMNESS; RESONANCE IONIZATION MASS SPECTROSCOPY; SPECTROPHOTOMETRY; STORAGE; SURFACES; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Ogwu, A. A., and Darma, T. H. A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu{sub 2}O/CuO thin films with resistive switching potential. United States: N. p., 2013. Web. doi:10.1063/1.4804326.
Ogwu, A. A., & Darma, T. H. A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu{sub 2}O/CuO thin films with resistive switching potential. United States. https://doi.org/10.1063/1.4804326
Ogwu, A. A., and Darma, T. H. 2013. "A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu{sub 2}O/CuO thin films with resistive switching potential". United States. https://doi.org/10.1063/1.4804326.
@article{osti_22162905,
title = {A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu{sub 2}O/CuO thin films with resistive switching potential},
author = {Ogwu, A. A. and Darma, T. H.},
abstractNote = {The achievement of a reproducible and controlled deposition of partitioned Cu{sub 2}O/CuO thin films by techniques compatible with ULSI processing like reactive magnetron sputtering has been reported as an outstanding challenge in the literature. This phase partitioning underlies their performance as reversible resistive memory switching devices in advanced microelectronic applications of the future. They are currently fabricated by thermal oxidation and chemical methods. We have used a combination of an understanding from plasma chemistry, thermo-kinetics of ions, and rf power variation during deposition to successfully identify a processing window for preparing partitioned Cu{sub 2}O/CuO films. The production of a core rich Cu{sub 2}O and surface rich Cu{sub 2}O/CuO mixture necessary for oxygen migration during resistive switching is confirmed by XRD peaks, Fourier transform infra red Cu (I)-O vibrational modes, XPS Cu 2P{sub 3/2} and O 1S peak fitting, and a comparison of satellite peak ratio's in Cu 2P{sub 3/2} fitted peaks. We are proposing based on the findings reported in this paper that an XPS satellite peak intensity(I{sub s}) to main peak intensity ratio (I{sub m}) {<=} 0.45 as an indicator of a core rich Cu{sub 2}O and surface rich Cu{sub 2}O/CuO formation in our prepared films. CuO is solely responsible for the satellite peaks. This is explained on the basis that plasma dissociation of oxygen will be limited to the predominant formation of Cu{sub 2}O under certain plasma deposition conditions we have identified in this paper, which also results in a core-rim phase partitioning. The deposited films also followed a Volmer-Weber columnar growth mode, which could facilitate oxygen vacancy migration and conductive filaments at the columnar interfaces. This is further confirmed by optical transmittance and band-gap measurements using spectrophotometry. This development is expected to impact on the early adoption of copper oxide based resistive memory electronic switching devices in advanced electronic devices of the future. The relative abundance of copper is another major complementary driver for the interest in copper oxide films.},
doi = {10.1063/1.4804326},
url = {https://www.osti.gov/biblio/22162905}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 18,
volume = 113,
place = {United States},
year = {Tue May 14 00:00:00 EDT 2013},
month = {Tue May 14 00:00:00 EDT 2013}
}