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Title: Electronic and crystalline structures of zero band-gap LuPdBi thin films grown epitaxially on MgO(100)

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4802795· OSTI ID:22162882
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  1. Institut fuer Anorganische und Analytische Chemie, Johannes Gutenberg-Universitaet, 55099 Mainz (Germany)
  2. Max Planck Institute for Chemical Physics of Solids, 01187 Dresden (Germany)
  3. IBM Almaden Research Center, San Jose, California 95120 (United States)
  4. Japan Synchrotron Radiation Research Institute (JASRI), SPring-8, Hyogo 679-5198 (Japan)

Thin films of the proposed topological insulator LuPdBi-a Heusler compound with the C1{sub b} structure-were prepared on Ta-Mo-buffered MgO(100) substrates by co-sputtering from PdBi{sub 2} and Lu targets. Epitaxial growth of LuPdBi films was confirmed by X-ray diffraction and reflection high-energy electron diffraction. The root-mean-square roughness of the films was as low as 1.45 nm, even though the films were deposited at high temperature. The film composition is close to the ideal stoichiometric ratio. The valence band spectra of the LuPdBi films, observed by hard X-ray photoelectron spectroscopy, correspond very well with the ab initio-calculated density of states.

OSTI ID:
22162882
Journal Information:
Applied Physics Letters, Vol. 102, Issue 17; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English