High detection efficiency micro-structured solid-state neutron detector with extremely low leakage current fabricated with continuous p-n junction
- Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3522 (United States)
- Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3522 (United States)
We report the continuous p-n junction formation in honeycomb structured Si diode by in situ boron deposition and diffusion process using low pressure chemical vapor deposition for solid-state thermal neutron detection applications. Optimized diffusion temperature of 800 Degree-Sign C was obtained by current density-voltage characteristics for fabricated p{sup +}-n diodes. A very low leakage current density of {approx}2 Multiplication-Sign 10{sup -8} A/cm{sup 2} at -1 V was measured for enriched boron filled honeycomb structured neutron detector with a continuous p{sup +}-n junction. The neutron detection efficiency for a Maxwellian spectrum incident on the face of the detector was measured under zero bias voltage to be {approx}26%. These results are very encouraging for fabrication of large area solid-state neutron detector that could be a viable alternative to {sup 3}He tube based technology.
- OSTI ID:
- 22162844
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 15; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
DENSITY
DIFFUSION
EFFICIENCY
FACE
HELIUM 3
HONEYCOMB STRUCTURES
LEAKAGE CURRENT
NEUTRON DETECTION
NEUTRON DETECTORS
P-N JUNCTIONS
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SILICON
SOLIDS
SPECTRA
THERMAL NEUTRONS