Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope
- Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)
- GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany)
- Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
- AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany)
- Aunt Daisy Scientific Ltd., Claremont House, High St., Lydney, Gloucestershire GL15 5DX (United Kingdom)
Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as non-polar III-nitride semiconductor thin films. Stacking faults are generally difficult to detect and quantify with existing characterization techniques. We demonstrate the use of electron channeling contrast imaging in the scanning electron microscope to non-destructively reveal basal plane stacking faults terminated by partial dislocations in m-plane GaN and InGaN/GaN multiple quantum well structures grown on {gamma}-LiAlO{sub 2} by metal organic vapor phase epitaxy.
- OSTI ID:
- 22162840
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 14; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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