Combined effects of nuclear and electronic energy losses in solids irradiated with a dual-ion beam

Journal Article · Mon Apr 08 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4801518· OSTI ID:22162838

Thome, Lionel; Debelle, Aurelien; Garrido, Frederico ^[1]; Trocellier, Patrick; Serruys, Yves; Miro, Sandrine ^[2]; Velisa, Gihan ^[2]

---

1. Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, CNRS-IN2P3-Universite Paris-Sud, Bat. 108, F-91405 Orsay (France)
2. CEA, DEN, Service de Recherches de Metallurgie Physique, Laboratoire JANNUS, F-91191 Gif/Yvette (France)

Single and dual-beam irradiations of oxide (c-ZrO{sub 2}, MgO, Gd{sub 2}Ti{sub 2}O{sub 7}) and carbide (SiC) single crystals were performed to study combined effects of nuclear (S{sub n}) and electronic (S{sub e}) energy losses. Rutherford backscattering experiments in channeling conditions show that the S{sub n}/S{sub e} cooperation induces a strong decrease of the irradiation-induced damage in SiC and MgO and almost no effects in c-ZrO{sub 2} and Gd{sub 2}Ti{sub 2}O{sub 7}. The healing process is ascribed to electronic excitations arising from the electronic energy loss of swift ions. These results present a strong interest for both fundamental understanding of the ion-solid interactions and technological applications in the nuclear industry where expected cooperative S{sub n}/S{sub e} effects may lead to the preservation of the integrity of nuclear devices.

• OSTI ID: 22162838
• Journal Information: Applied Physics Letters, Vol. 102, Issue 14; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHANNELING
DAMAGE
ELECTRONS
ENERGY LOSSES
ENERGY-LOSS SPECTROSCOPY
EXCITATION
GADOLINIUM COMPOUNDS
INTERACTIONS
ION BEAMS
IRRADIATION
MAGNESIUM OXIDES
NUCLEAR INDUSTRY
PRESERVATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SOLIDS
TITANATES
ZIRCONIUM OXIDES