Carrier localization and in-situ annealing effect on quaternary Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaAs quantum wells grown by Sb pre-deposition
- Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology (Ireland)
- Department of Electrical Engineering, California NanoSystems Institute, UCLA, Los Angeles, California 90095 (United States)
- Tyndall National Institute, UCC, Lee Maltings, Cork (Ireland)
Using temperature-dependent photoluminescence spectroscopy, we have investigated and compared intrinsic InGaAs, intrinsic GaInAsSb, and p-i-n junction GaInAsSb quantum wells (QWs) embedded in GaAs barriers. Strong carrier localization inside the intrinsic GaInAsSb/GaAs QW has been observed together with its decrease inside the p-i-n sample. This is attributed to the effect of an in-situ annealing during the top p-doped AlGaAs layer growth at an elevated temperature of 580 Degree-Sign C, leading to Sb-atom diffusion and even atomic redistribution. High-resolution X-ray diffraction measurements and the decrease of both maximum localization energy and full delocalization temperature in the p-i-n QW sample further corroborated this conclusion.
- OSTI ID:
- 22162802
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 11; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ABSORPTION SPECTROSCOPY
ANNEALING
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
CARRIERS
DIFFUSION
DOPED MATERIALS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
P-N JUNCTIONS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY