Low substrate temperature fabrication of high-performance metal oxide thin-film by magnetron sputtering with target self-heating
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117576 (Singapore)
- Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou 350002 (China)
- Department of Physics, Xiamen University, Xiamen 361005 (China)
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)
- Du Pont Apollo Limited, No. 8 Science Park West Ave., Hong Kong Science Park, Pak Shek Kok, New Territories (Hong Kong)
Al-doped ZnO (AZO) films with high transmittance and low resistivity were achieved on low temperature substrates by radio frequency magnetron sputtering using a high temperature target. By investigating the effect of target temperature (T{sub G}) on electrical and optical properties, the origin of electrical conduction is verified as the effect of the high T{sub G}, which enhances crystal quality that provides higher mobility of electrons as well as more effective activation for the Al dopants. The optical bandgap increases from 3.30 eV for insulating ZnO to 3.77 eV for conducting AZO grown at high T{sub G}, and is associated with conduction-band filling up to 1.13 eV due to the Burstein-Moss effect.
- OSTI ID:
- 22162791
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 11; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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