Self healing of defected graphene

Journal Article · Mon Mar 11 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4795292· OSTI ID:22162785

Chen, Jianhui; Shi, Tuwan; Cai, Tuocheng; Wu, Xiaosong; Yu, Dapeng ^[1]; Xu, Tao; Sun, Litao ^[2]

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1. School of Physics, Peking University, Beijing 100871 (China)
2. SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096 (China)

For electronics applications, defects in graphene are usually undesirable because of their ability to scatter charge carriers, thereby reduce the carrier mobility. It would be extremely useful if the damage can be repaired. In this work, we employ Raman spectroscopy, X-ray photoemission spectroscopy, transmission electron microscopy, and electrical measurements to study defects in graphene introduced by argon plasma bombardment. We have found that majority of these defects can be cured by a simple thermal annealing process. The self-healing is attributed to recombination of mobile carbon adatoms with vacancies. With increasing level of plasma induced damage, the self-healing becomes less effective.

• OSTI ID: 22162785
• Journal Information: Applied Physics Letters, Vol. 102, Issue 10; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
ARGON
CARRIER MOBILITY
CHARGE CARRIERS
CRYSTAL DEFECTS
DAMAGE
GRAPHENE
PHOTOEMISSION
RAMAN SPECTRA
RAMAN SPECTROSCOPY
RECOMBINATION
REPAIR
TRANSMISSION ELECTRON MICROSCOPY
VACANCIES
X RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY