Excitation dependent two-component spontaneous emission and ultrafast amplified spontaneous emission in dislocation-free InGaN nanowires

Journal Article · Mon Mar 04 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4794418· OSTI ID:22162771

You, Guanjun; Zhang, Chunfeng; Xu, Jian ^[1]; Guo, Wei; Bhattacharya, Pallab ^[2]; Henderson, Ron ^[3]

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1. Department of Engineering Science and Mechanics, The Penn State University, University Park, Pennsylvania 16802 (United States)
2. Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109 (United States)
3. Department of Physics and Astronomy, Middle Tennessee State University, Murfreesboro, Tennessee 37132 (United States)

Amplified spontaneous emission (ASE) at 456 nm from In{sub 0.2}Ga{sub 0.8}N nanowires grown on (001) silicon by catalyst-free molecular beam epitaxy was observed at room temperature under femtosecond excitation. The photoluminescence spectra below ASE threshold consist of two spontaneous emission bands centered at {approx}555 nm and {approx}480 nm, respectively, revealing the co-existence of deeply and shallowly localized exciton states in the nanowires. The ASE peak emerges from the 480 nm spontaneous emission band when the excitation density exceeds {approx}120 {mu}J/cm{sup 2}, indicating that optical gain arises from the radiative recombination of shallowly localized excitons in the nanowires. Time-resolved photoluminescence measurements revealed that the ASE process completes within 1.5 ps, suggesting a remarkably high stimulated emission recombination rate in one-dimensional InGaN nanowires.

• OSTI ID: 22162771
• Journal Information: Applied Physics Letters, Vol. 102, Issue 9; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CATALYSTS
DISLOCATIONS
EXCITATION
EXCITONS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
NITROGEN COMPOUNDS
ONE-DIMENSIONAL CALCULATIONS
PHOTOLUMINESCENCE
QUANTUM WIRES
RECOMBINATION
SEMICONDUCTOR MATERIALS
SILICON
SPECTRA
SUPERRADIANCE
TEMPERATURE RANGE 0273-0400 K
TIME RESOLUTION