Energy-loss rate of a fast particle in two-dimensional semiconductors with Rashba spin-orbit coupling

Journal Article · Mon Feb 04 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4790847· OSTI ID:22162727

Feng, W. ^[1]; Tawfiq, Asya ^[2]; Cao, J. C. ^[3]; Zhang, C. ^[4]

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1. Department of Physics, Jiangsu University, Zhenjiang, Jiangsu (China)
2. School of Physics, University of Wollongong, New South Wales 2522 (Australia)
3. Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai (China)
4. School of Physics and Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia)

The energy-loss rate (ELR) of a charged particle in a two-dimensional semiconductor with Rashba spin-orbit coupling is studied. Our model takes into account of the temperature and density dependence of the electronic properties of the Rashba system. The energy and temperature dependence of the ELR are presented. It is found that a finite Rashba spin-orbit coupling offers a mechanism of tuning the mean scattering time in narrow-gap semiconductors. With a change of Rashba parameter of around 3 times, the mean scattering time can change by one to two orders of magnitude.

• OSTI ID: 22162727
• Journal Information: Applied Physics Letters, Vol. 102, Issue 5; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
CHARGED PARTICLES
DENSITY
ELECTRON GAS
ENERGY LOSSES
GALLIUM ARSENIDES
INDIUM COMPOUNDS
INTERACTIONS
L-S COUPLING
ORBITS
PARTICLES
QUANTUM WELLS
SCATTERING
SEMICONDUCTOR MATERIALS
SPIN
TEMPERATURE DEPENDENCE
TUNING
TWO-DIMENSIONAL CALCULATIONS