Optoelectronic measurement of x-ray synchrotron pulses: A proof of concept demonstration

Journal Article · Mon Feb 04 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4791559· OSTI ID:22162719

Durbin, Stephen M.; Caffee, Marc; Savikhin, Sergei ^[1]; Mahmood, Aamer ^[2]; Dufresne, Eric M.; Wen, Haidan; Li, Yuelin ^[3]

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1. Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States)
2. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)
3. Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

Optoelectronic detection using photoconductive coplanar stripline devices has been applied to measuring the time profile of x-ray synchrotron pulses, a proof of concept demonstration that may lead to improved time-resolved x-ray studies. Laser sampling of current vs time delay between 12 keV x-ray and 800 nm laser pulses reveal the {approx}50 ps x-ray pulse width convoluted with the {approx}200 ps lifetime of the conduction band carriers. For GaAs implanted with 8 MeV protons, a time profile closer to the x-ray pulse width is observed. The protons create defects over the entire depth sampled by the x-rays, trapping the x-ray excited conduction electrons and minimizing lifetime broadening of the electrical excitation.

• OSTI ID: 22162719
• Journal Information: Applied Physics Letters, Vol. 102, Issue 5; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRONS
ELECTRO-OPTICAL EFFECTS
EXCITATION
GALLIUM ARSENIDES
KEV RANGE
LASER RADIATION
LIFETIME
MEV RANGE 01-10
PHOTOCONDUCTIVITY
PULSES
SEMICONDUCTOR MATERIALS
SYNCHROTRON RADIATION
SYNCHROTRONS
TIME DELAY
TIME MEASUREMENT
TIME RESOLUTION
TRAPPING
X RADIATION
X-RAY DETECTION